IRIS
PRETE, Paola
 Distribuzione geografica
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Continente #
EU - Europa 6.264
NA - Nord America 5.093
AS - Asia 4.166
SA - Sud America 566
Continente sconosciuto - Info sul continente non disponibili 171
AF - Africa 62
OC - Oceania 3
Totale 16.325
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Nazione #
US - Stati Uniti d'America 4.831
IT - Italia 2.140
SG - Singapore 1.919
IE - Irlanda 1.556
RU - Federazione Russa 1.128
CN - Cina 820
HK - Hong Kong 602
BR - Brasile 466
SE - Svezia 384
UA - Ucraina 371
VN - Vietnam 339
IN - India 163
FR - Francia 148
CA - Canada 136
FI - Finlandia 125
DE - Germania 119
GB - Regno Unito 115
KR - Corea 90
BD - Bangladesh 63
MX - Messico 58
AR - Argentina 47
JP - Giappone 43
PL - Polonia 42
ZA - Sudafrica 33
ES - Italia 28
BE - Belgio 20
ID - Indonesia 20
NL - Olanda 19
IQ - Iraq 18
PK - Pakistan 18
EC - Ecuador 16
CR - Costa Rica 15
TR - Turchia 15
CZ - Repubblica Ceca 14
AT - Austria 13
CO - Colombia 12
LT - Lituania 11
CL - Cile 9
AE - Emirati Arabi Uniti 7
HN - Honduras 7
TN - Tunisia 7
GT - Guatemala 6
PR - Porto Rico 6
SN - Senegal 6
SV - El Salvador 6
GP - Guadalupe 5
JM - Giamaica 5
MA - Marocco 5
MD - Moldavia 5
NP - Nepal 5
RO - Romania 5
TT - Trinidad e Tobago 5
VE - Venezuela 5
BH - Bahrain 4
CH - Svizzera 4
CW - ???statistics.table.value.countryCode.CW??? 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
EG - Egitto 4
JO - Giordania 4
MY - Malesia 4
PH - Filippine 4
PY - Paraguay 4
AU - Australia 3
EE - Estonia 3
EU - Europa 3
IL - Israele 3
IR - Iran 3
KZ - Kazakistan 3
LU - Lussemburgo 3
PE - Perù 3
SA - Arabia Saudita 3
TH - Thailandia 3
BB - Barbados 2
BG - Bulgaria 2
GY - Guiana 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
PS - Palestinian Territory 2
SY - Repubblica araba siriana 2
UZ - Uzbekistan 2
AL - Albania 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BM - Bermuda 1
BO - Bolivia 1
BS - Bahamas 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
DK - Danimarca 1
GE - Georgia 1
GR - Grecia 1
HU - Ungheria 1
KE - Kenya 1
LB - Libano 1
MC - Monaco 1
MN - Mongolia 1
MQ - Martinica 1
NG - Nigeria 1
Totale 16.157
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Città #
Lecce 1.644
Dublin 1.553
San Jose 670
Hong Kong 552
Singapore 544
Ashburn 501
Council Bluffs 473
Moscow 290
Beijing 242
Chandler 238
Dallas 211
Jacksonville 193
Ho Chi Minh City 131
New York 131
Los Angeles 121
Santa Clara 99
Wayanad 99
Princeton 97
Lauterbourg 84
Seoul 81
Milan 80
Hanoi 72
Des Moines 59
Rome 50
São Paulo 50
Munich 48
Montreal 47
West Jordan 47
Central District 44
Tokyo 38
Wilmington 38
Warsaw 35
Orem 34
Ann Arbor 32
Miano 32
Phoenix 31
Taranto 31
Chicago 27
Kent 27
Ogden 27
Boardman 26
Atlanta 25
Brooklyn 24
Chennai 24
Houston 23
Mexico City 21
Stockholm 21
Johannesburg 20
The Dalles 20
Brussels 19
Columbus 19
Denver 19
Naples 17
Poplar 17
Frankfurt am Main 16
Helsinki 16
London 16
Amsterdam 15
Da Nang 15
Lequile 15
Turku 15
Haiphong 14
Manchester 14
Nuremberg 14
Toronto 14
Trepuzzi 13
Belo Horizonte 12
Boston 12
Guangzhou 12
San José 12
Jinan 11
Kyiv 11
North Bergen 11
Rio de Janeiro 11
Bakersfield 10
Bari 10
Biên Hòa 10
Charlotte 10
Mumbai 10
Seattle 10
Tianjin 10
Brasília 9
Cleveland 9
Detroit 9
Marseille 9
Shenyang 9
Baghdad 8
Buffalo 8
Dhaka 8
Florence 8
Gwanak-gu 8
Hải Dương 8
Lappeenranta 8
Pavia 8
Porto Alegre 8
Prague 8
Querétaro 8
Redwood City 8
Tampa 8
Turin 8
Totale 9.594
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Nome #
Au-Catalyst Assisted MOVPE Growth of CdTe Nanowires for Photovoltaic Applications 277
DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets 231
Luminescence of GaAs/AlGaAs core-shell nanowires grown by MOVPE using tertiarybutylarsine 227
Au Nanoparticles Prepared by Physical Method on Si and Sapphire Substrates for Biosensor Applications 223
CdTe nanowires by Au-catalyzed metalorganic vapor phase epitaxy 220
Surface-mediated electrical transport in single GaAs nanowires 216
Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography 214
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 214
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 211
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 210
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 208
Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires 208
Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography 206
Structural characterization of MOVPE-grown GaAs/AlGaAs core-shell nanowires through transmission electron microscopy 203
3D mapping of nanoscale electric potentials in semiconductor structures with electron-holographic tomography 201
Morphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping 200
On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures 197
GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties 197
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene 196
Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted metalorganic vapor phase epitaxy 188
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires 187
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 186
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 186
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 185
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 183
Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy 182
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 181
Si implantation of SiO2 films by a new ion implantation technique 180
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 180
Formation of epitaxial Au nanoislands on (100)Si 178
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 177
Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si heterosubstrates by metalorganic vapour phase epitaxy 176
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 175
Effect of VLS and VS mechanisms during shell growth of GaAs/AlGaAs core-shell nanowires investigated by transmission electron microscopy 172
Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures 170
Direct measurement of band edge discountinuity in individual core-shell nanowires by photocurrent spectroscopy 170
Impiantazione ionica per la realizzazione di nanocristalli di Si in matrice di SiO2 166
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires 166
Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering 163
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 162
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 160
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 159
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 154
Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates 153
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates 152
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 150
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 148
Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells 145
Nanoscale three-dimensional reconstruction of elastic and inelastic mean free path lengths by electron holographic tomography 144
Adsorption and decomposition steps on Cu(111) of liquid aromatic hydrocarbon precursors for low-temperature CVD of graphene: A DFT study 142
Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures 140
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 138
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 137
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 136
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 136
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 135
Synthesis and annealing effects on microstructure and optical properties of wide-bandgap polycrystalline ferro-pseudobrookite FeTi2O5 sol-gel layers 134
Observation and impact of a “surface skin effect” on lateral growth of nanocrystals 134
GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content 133
Non-radiative and radiative recombination processes of ZnS epitaxial layers 133
Tunable hot-electron transfer within a single core-shell nanowire 131
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 130
Why III-V nanowires can challenge high-efficiency photovoltaic solar cells 129
Molecular decomposition reactions and early nucleation in CVD growth of graphene on Cu and Si substrates from toluene 129
Recent developments in the MOVPE growth of ZnSe-based compounds and heterostructures 128
Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires 127
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 126
Inner composition, defects and morphology of AlGaAs nanowire grown by Au-catalyzed MOVPE 124
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 124
Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices 123
Sintesi di nanocristalli di Si in matrice di SiO2 mediante plasma controllato indotto da laser ad eccimeri 122
MOVPE self-assembly and physical properties of free-standing III-V nanowires 120
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 120
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 120
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 119
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te" 118
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 118
Solvent-free functionalization of carbon nanotube buckypaper with amines 118
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 117
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 116
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te, J.Cryst. Growth, (1995). 115
EXCITON SPECTROSCOPY IN Zn1-xCdxSe/ZnSe QUANTUM WELLS, Phys. Rev. B 51, (1995). 115
Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 115
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 115
Novel precursors for the growth of device-quality ZnSe-based compounds 114
Optical heterodyne detection of magnetic resonance in semiconductor heterostructures 110
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 109
On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays 108
Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors 108
Vibrational Raman scattering from surfaces of III-V semiconductors: Microscopic and macroscopic surface modes 108
EXCITONS AND FREE CARRIER LASING IN II-VI QUANTUM WELLS, Materials Science Forum Vols. 182-184, 341 (1995). 106
MOVPE growth of MgSe and ZnMgSe on (100)GaAs 105
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On direct-writing methods for electrically contacting GaAs and Ge nanowire devices 100
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 99
Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires 98
III-V nanowires: challenging nanostructures for high-efficiency solar cells 92
Polarization anisotropy of individual core/shell GaAs/AlGaAs nanowires by photocurrent spectroscopy 92
null 84
Totale 15.193
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Categoria #
all - tutte 75.255
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 75.255
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022384 0 0 0 82 75 2 11 32 4 11 24 143
2022/20232.451 116 135 85 69 89 113 28 81 1.659 5 47 24
2023/2024681 40 57 31 59 59 59 16 25 72 151 93 19
2024/20252.346 21 30 30 32 127 344 94 95 874 169 260 270
2025/20266.285 472 758 659 798 696 289 621 277 1.088 365 181 81
2026/20271.713 153 400 314 846 0 0 0 0 0 0 0 0
Totale 16.325