IRIS
PRETE, Paola
 Distribuzione geografica
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Continente #
EU - Europa 5.229
AS - Asia 3.311
NA - Nord America 2.707
SA - Sud America 521
AF - Africa 52
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 3
Totale 11.827
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Nazione #
US - Stati Uniti d'America 2.589
IT - Italia 1.798
SG - Singapore 1.623
IE - Irlanda 1.552
CN - Cina 626
RU - Federazione Russa 626
HK - Hong Kong 517
BR - Brasile 441
SE - Svezia 384
UA - Ucraina 369
VN - Vietnam 180
IN - India 138
FI - Finlandia 116
DE - Germania 98
KR - Corea 88
GB - Regno Unito 78
CA - Canada 60
FR - Francia 52
MX - Messico 46
AR - Argentina 40
PL - Polonia 40
JP - Giappone 33
ZA - Sudafrica 30
BD - Bangladesh 26
ES - Italia 25
BE - Belgio 20
NL - Olanda 17
EC - Ecuador 15
ID - Indonesia 15
CZ - Repubblica Ceca 14
AT - Austria 13
IQ - Iraq 10
LT - Lituania 10
TR - Turchia 9
CO - Colombia 8
AE - Emirati Arabi Uniti 7
PK - Pakistan 7
TN - Tunisia 6
CL - Cile 5
SN - Senegal 5
DO - Repubblica Dominicana 4
EG - Egitto 4
JO - Giordania 4
MA - Marocco 4
NP - Nepal 4
VE - Venezuela 4
AU - Australia 3
BH - Bahrain 3
CH - Svizzera 3
EU - Europa 3
IR - Iran 3
KZ - Kazakistan 3
LU - Lussemburgo 3
PY - Paraguay 3
RO - Romania 3
BB - Barbados 2
BG - Bulgaria 2
DZ - Algeria 2
GY - Guiana 2
IL - Israele 2
MD - Moldavia 2
OM - Oman 2
PA - Panama 2
PE - Perù 2
SA - Arabia Saudita 2
TT - Trinidad e Tobago 2
UZ - Uzbekistan 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
CI - Costa d'Avorio 1
DK - Danimarca 1
GE - Georgia 1
GT - Guatemala 1
LB - Libano 1
MN - Mongolia 1
MY - Malesia 1
NO - Norvegia 1
PH - Filippine 1
SV - El Salvador 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
UY - Uruguay 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 11.827
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Città #
Lecce 1.644
Dublin 1.550
Hong Kong 473
Singapore 417
Chandler 237
Dallas 197
Jacksonville 193
Beijing 190
Ashburn 176
Moscow 154
New York 101
Wayanad 99
Princeton 96
Los Angeles 87
Seoul 81
Ho Chi Minh City 72
Des Moines 57
São Paulo 50
West Jordan 47
Munich 45
Central District 44
Wilmington 38
Warsaw 34
Montreal 33
Ann Arbor 32
Hanoi 32
Tokyo 32
Rome 28
Santa Clara 28
Kent 27
Ogden 27
Boardman 25
Brooklyn 21
Orem 21
Stockholm 21
The Dalles 20
Atlanta 19
Brussels 19
Houston 19
Chennai 18
Denver 18
Johannesburg 18
Poplar 17
Columbus 16
Chicago 15
Lequile 15
London 15
Turku 15
Manchester 14
Mexico City 14
Taranto 14
Amsterdam 13
Trepuzzi 13
Belo Horizonte 11
Boston 11
Guangzhou 11
Haiphong 11
Helsinki 11
Jinan 11
Kyiv 11
Phoenix 11
Rio de Janeiro 11
Biên Hòa 10
Frankfurt am Main 10
Tianjin 10
Toronto 10
Shenyang 9
Pavia 8
Porto Alegre 8
Prague 8
Querétaro 8
Redwood City 8
Buenos Aires 7
Gwanak-gu 7
Marseille 7
Mumbai 7
Nuremberg 7
Vienna 7
Brasília 6
Charlotte 6
Da Nang 6
Falls Church 6
Fortaleza 6
Guayaquil 6
Hải Dương 6
João Pessoa 6
Nanjing 6
Salvador 6
Vancouver 6
Xi'an 6
Bogotá 5
Changsha 5
City of London 5
Dakar 5
Falkenstein 5
Goiânia 5
Hangzhou 5
Norwalk 5
San Jose 5
Shanghai 5
Totale 7.053
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Nome #
Au-Catalyst Assisted MOVPE Growth of CdTe Nanowires for Photovoltaic Applications 232
DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets 188
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 175
Surface-mediated electrical transport in single GaAs nanowires 174
Au Nanoparticles Prepared by Physical Method on Si and Sapphire Substrates for Biosensor Applications 173
Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography 172
Luminescence of GaAs/AlGaAs core-shell nanowires grown by MOVPE using tertiarybutylarsine 168
Characterization of ZnTe homo-epitaxial layers by means of synchrotron X-ray topography 167
Structural characterization of MOVPE-grown GaAs/AlGaAs core-shell nanowires through transmission electron microscopy 166
Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires 164
3D mapping of nanoscale electric potentials in semiconductor structures with electron-holographic tomography 163
CdTe nanowires by Au-catalyzed metalorganic vapor phase epitaxy 163
GaAs-AlGaAs core-shell nanowire arrays: correlating MOVPE growth and luminescence properties 161
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 160
On the MOVPE growth and luminescence properties of GaAs-AlGaAs core-multishell nanowire quantum structures 160
Morphology and microstructure of core-shell GaAs/GaxAl1-xAs nanowires investigated by He-ion microscopy and X-ray reciprocal space mapping 160
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 159
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 155
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 153
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 151
Microstructural characterization of GaAs-AlxGa1-xAs core-shell nanowires grown by Au-catalyst assisted metalorganic vapor phase epitaxy 149
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 148
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires 148
Direct epitaxial CVD synthesis of tungsten disulfide on epitaxial and CVD graphene 148
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 143
Mass-transport driven growth dynamics of AlGaAs shells deposited around dense GaAs nanowires by metalorganic vapor phase epitaxy 143
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 140
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 139
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 139
Direct measurement of band edge discountinuity in individual core-shell nanowires by photocurrent spectroscopy 139
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 138
Synthesis of vertically-aligned GaAs nanowires on GaAs/(111)Si heterosubstrates by metalorganic vapour phase epitaxy 136
Formation of epitaxial Au nanoislands on (100)Si 133
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 133
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 131
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 130
Si implantation of SiO2 films by a new ion implantation technique 129
Impiantazione ionica per la realizzazione di nanocristalli di Si in matrice di SiO2 128
Carrier transport and recombination in MOVPE-grown CdTe/ZnTe/GaAs and ZnTe/GaAs heterostructures 125
Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires 125
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 123
Microstructural and morphological properties of homoepitaxial (001)ZnTe layers investigated by x-ray diffuse scattering 122
Grazing incident X-ray topographs of heteroepitaxial ZnSe films on GaAs substrates 120
Effect of VLS and VS mechanisms during shell growth of GaAs/AlGaAs core-shell nanowires investigated by transmission electron microscopy 115
Nanoscale three-dimensional reconstruction of elastic and inelastic mean free path lengths by electron holographic tomography 114
Pulsed plasma ion source to create Si nanocrystals in SiO2 substrates 112
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 110
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 106
null 105
null 104
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 104
null 102
Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells 101
Adsorption and decomposition steps on Cu(111) of liquid aromatic hydrocarbon precursors for low-temperature CVD of graphene: A DFT study 100
Observation and impact of a “surface skin effect” on lateral growth of nanocrystals 100
Recent developments in the MOVPE growth of ZnSe-based compounds and heterostructures 98
Impact of electron confinement on the lasing properties of ZnS/ZnSe superlattices 97
Inner composition, defects and morphology of AlGaAs nanowire grown by Au-catalyzed MOVPE 96
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 96
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 96
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te" 95
Tunable hot-electron transfer within a single core-shell nanowire 95
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 95
Non-radiative and radiative recombination processes of ZnS epitaxial layers 95
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 95
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 94
Sintesi di nanocristalli di Si in matrice di SiO2 mediante plasma controllato indotto da laser ad eccimeri 93
Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures 93
Nanometer-scale tomographic reconstruction of three-dimensional electrostatic potentials in GaAs/AlGaAs core-shell nanowires 92
SURFACE REACTIONS AND PRECURSORS STOICHIOMETRY EFFECTS ON THE MOVPE GROWTH OF ZnTe BY Me2Zn AND (i-Pr)2Te, J.Cryst. Growth, (1995). 91
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 91
GaAs hetero-epitaxial layers grown by MOVPE on exactly-oriented and off-cut (1 1 1)Si: Lattice tilt, mosaicity and defects content 90
Why III-V nanowires can challenge high-efficiency photovoltaic solar cells 90
EXCITON SPECTROSCOPY IN Zn1-xCdxSe/ZnSe QUANTUM WELLS, Phys. Rev. B 51, (1995). 87
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 87
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 87
Molecular decomposition reactions and early nucleation in CVD growth of graphene on Cu and Si substrates from toluene 87
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 86
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 86
Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 85
Novel precursors for the growth of device-quality ZnSe-based compounds 85
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 84
null 84
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 84
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 84
Optical heterodyne detection of magnetic resonance in semiconductor heterostructures 84
null 84
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 82
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 81
EXCITONS AND FREE CARRIER LASING IN II-VI QUANTUM WELLS, Materials Science Forum Vols. 182-184, 341 (1995). 80
MOVPE self-assembly and physical properties of free-standing III-V nanowires 80
Vibrational Raman scattering from surfaces of III-V semiconductors: Microscopic and macroscopic surface modes 80
Synthesis and annealing effects on microstructure and optical properties of wide-bandgap polycrystalline ferro-pseudobrookite FeTi2O5 sol-gel layers 79
Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors 79
On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays 77
MOVPE growth of MgSe and ZnMgSe on (100)GaAs 77
On direct-writing methods for electrically contacting GaAs and Ge nanowire devices 76
null 71
Electron holographic tomography for mapping the three-dimensional distribution of electrostatic potential in III-V semiconductor nanowires 70
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 70
Totale 11.634
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Categoria #
all - tutte 57.354
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.354
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021479 0 0 0 0 0 99 4 99 17 129 33 98
2021/2022420 6 6 24 82 75 2 11 32 4 11 24 143
2022/20232.451 116 135 85 69 89 113 28 81 1.659 5 47 24
2023/2024681 40 57 31 59 59 59 16 25 72 151 93 19
2024/20252.346 21 30 30 32 127 344 94 95 874 169 260 270
2025/20263.627 472 758 659 798 699 241 0 0 0 0 0 0
Totale 11.954