Novel precursors for the growth of device-quality ZnSe-based compounds

Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-bandgap II–VI compound semiconductors remain interesting alternative materials in many respects. This is especially true for mixed-colour and white light emitting diodes (for example, for incorporation as backlight illumination in the liquid crystal displays of cell phones). In particular, with zinc selenide based diodes beginning to enter the market, the possibility of establishing a metalorganic vapour phase epitaxy process for these materials is being raised by recent work on a novel class of precursor chemicals.