The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe based p-i-n diode X-/gamma-ray detectors. n-type CdTe:I with resistivities around a few ohm cm and electron concentrations in the mid 1016 cm-3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure.
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes
LOVERGINE, Nicola;PRETE, Paola;MANCINI, Anna Maria
2007-01-01
Abstract
The growth, processing and electrical characterization of n-type homo-epitaxial CdTe:I layers on detector grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe based p-i-n diode X-/gamma-ray detectors. n-type CdTe:I with resistivities around a few ohm cm and electron concentrations in the mid 1016 cm-3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the I-V characteristic of a Al/n-CdTe:I/i-CdTe/Pt device structure.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
