We report on the atmospheric pressure MOVPE growth and characterisation of ZnSe, ZnS and ZnSxSe1-x, (0.095<x<0.629) epilayers; on (100)GaAs by using a novel class of VI-group alkyls of the form R2X2 (where X=Se, S and R=Et, Me). These precursors allowed to reduce the growth temperatures of pyrolytic MOVPE by almost 150°C with respect to the more common R2X alkyls. Growth temperatures below 400°C were achieved. Calibrated secondary ion mass spectrometry (SIMS) analysis carried out on ZnSe epilayers grown by Me2Se2 showed [H] around (1-3)x10^(17) cm^(-3), i.e. amongst the lowest ever reported for MOVPE-grown ZnSe. Mechanisms that explain these findings are briefly discussed. Cl and I incorporation in ZnSe were also evaluated by SIMS and indicated overall residual concentrations <6x10^(15) cm^(-3). The structural properties of ZnSe and nearly lattice-matched ZnSSe epilayers were assessed by double-crystal Xray diffraction measurements. 5K cathodoluminescence showed the good optical quality of as-grown ZnSe, further confirming the results of SIMS analysis.

A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers

PRETE, Paola;LOVERGINE, Nicola;MANCINI, Anna Maria;
2000-01-01

Abstract

We report on the atmospheric pressure MOVPE growth and characterisation of ZnSe, ZnS and ZnSxSe1-x, (0.095
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/367629
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