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EnglishAu-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500 °C, using tertiarybutylarsine and trimethylgallium in H2. The nanowires are (1¯1¯1¯)B aligned and kink-free. Below 425 °C the nanowires have narrow base diameter distributions, closely matching the size 60 nm of the Au nanoparticles at their tip no tapering. Above 425 °C the nanowires show a exagonal-based pyramidal shape with base edges normal to the [211] in-plane substrate directions and base diameters which increase exponentially with temperature, indicating a kinetics limited growth along the nanowire sidewalls. Activation energies in the range of 20–23 kcal/mol were estimated for growth along both the sidewalls and the (1¯1¯1¯)B direction.
| Titolo: | Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Abstract: | Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500 °C, using tertiarybutylarsine and trimethylgallium in H2. The nanowires are (1¯1¯1¯)B aligned and kink-free. Below 425 °C the nanowires have narrow base diameter distributions, closely matching the size 60 nm of the Au nanoparticles at their tip no tapering. Above 425 °C the nanowires show a exagonal-based pyramidal shape with base edges normal to the [211] in-plane substrate directions and base diameters which increase exponentially with temperature, indicating a kinetics limited growth along the nanowire sidewalls. Activation energies in the range of 20–23 kcal/mol were estimated for growth along both the sidewalls and the (1¯1¯1¯)B direction. | |
| Handle: | http://hdl.handle.net/11587/106063 | |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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