Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500 °C, using tertiarybutylarsine and trimethylgallium in H2. The nanowires are (1¯1¯1¯)B aligned and kink-free. Below 425 °C the nanowires have narrow base diameter distributions, closely matching the size 60 nm of the Au nanoparticles at their tip no tapering. Above 425 °C the nanowires show a exagonal-based pyramidal shape with base edges normal to the [211] in-plane substrate directions and base diameters which increase exponentially with temperature, indicating a kinetics limited growth along the nanowire sidewalls. Activation energies in the range of 20–23 kcal/mol were estimated for growth along both the sidewalls and the (1¯1¯1¯)B direction.

Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine

P. PAIANO;PRETE, Paola;LOVERGINE, Nicola
;
MANCINI, Anna Maria
2006

Abstract

Au-catalyzed self-assembly of GaAs nanowires on (1¯1¯1¯)B GaAs by metalorganic vapor phase epitaxy is reported between 375 and 500 °C, using tertiarybutylarsine and trimethylgallium in H2. The nanowires are (1¯1¯1¯)B aligned and kink-free. Below 425 °C the nanowires have narrow base diameter distributions, closely matching the size 60 nm of the Au nanoparticles at their tip no tapering. Above 425 °C the nanowires show a exagonal-based pyramidal shape with base edges normal to the [211] in-plane substrate directions and base diameters which increase exponentially with temperature, indicating a kinetics limited growth along the nanowire sidewalls. Activation energies in the range of 20–23 kcal/mol were estimated for growth along both the sidewalls and the (1¯1¯1¯)B direction.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/106063
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