The different approaches being currently explored for the fabrication of free-standing quasi-1D nanostructures of III-V compound semiconductors utilizing the MOVPE technology are reviewed: major limitations and advantages are discussed. In particular, we focus on the self-assembly of semiconductor nanowires by the so-called metal-catalyst assisted ― or VLS ― mechanism. The latter is currently considered a most promising technology for the realization of high quality quasi-1D nanostructures. Examples of this approach are given based on results obtained in the author’s laboratory using low pressure MOVPE to growth nanowire structures of III-As compounds.
MOVPE self-assembly and physical properties of free-standing III-V nanowires
LOVERGINE, Nicola
2010-01-01
Abstract
The different approaches being currently explored for the fabrication of free-standing quasi-1D nanostructures of III-V compound semiconductors utilizing the MOVPE technology are reviewed: major limitations and advantages are discussed. In particular, we focus on the self-assembly of semiconductor nanowires by the so-called metal-catalyst assisted ― or VLS ― mechanism. The latter is currently considered a most promising technology for the realization of high quality quasi-1D nanostructures. Examples of this approach are given based on results obtained in the author’s laboratory using low pressure MOVPE to growth nanowire structures of III-As compounds.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
