Grazing incident X-ray reflection topography was used to evaluate the crystal perfection of ZnSe epilayers grown by metalorganic vapour phase epitaxy on low-dislocation-density (10 0)GaAs substrates. Grazing incident topographs were recorded from 224 reflections at a wavelength and an incident angle of 0.1334nm and 0.17°, respectively. We found that there is a remarkable difference between samples with ZnSe epilayer thinner than the critical thickness and thicker samples; lattice imperfections in thin ZnSe heteroepitaxial layers consist of small changes of the ZnSe lattice constant and bending of the crystal planes.

Assessment of heteroepitaxial ZnSe layers on GaAs by means of grazing incident X-ray topography

PRETE, Paola;LOVERGINE, Nicola
2006

Abstract

Grazing incident X-ray reflection topography was used to evaluate the crystal perfection of ZnSe epilayers grown by metalorganic vapour phase epitaxy on low-dislocation-density (10 0)GaAs substrates. Grazing incident topographs were recorded from 224 reflections at a wavelength and an incident angle of 0.1334nm and 0.17°, respectively. We found that there is a remarkable difference between samples with ZnSe epilayer thinner than the critical thickness and thicker samples; lattice imperfections in thin ZnSe heteroepitaxial layers consist of small changes of the ZnSe lattice constant and bending of the crystal planes.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/108579
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