Grazing incident X-ray reﬂection topography was used to evaluate the crystal perfection of ZnSe epilayers grown by metalorganic vapour phase epitaxy on low-dislocation-density (10 0)GaAs substrates. Grazing incident topographs were recorded from 224 reﬂections at a wavelength and an incident angle of 0.1334nm and 0.17°, respectively. We found that there is a remarkable difference between samples with ZnSe epilayer thinner than the critical thickness and thicker samples; lattice imperfections in thin ZnSe heteroepitaxial layers consist of small changes of the ZnSe lattice constant and bending of the crystal planes.
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