MANCINI, Anna Maria
 Distribuzione geografica
Continente #
EU - Europa 4.130
NA - Nord America 1.268
AS - Asia 261
Continente sconosciuto - Info sul continente non disponibili 6
AF - Africa 2
OC - Oceania 1
SA - Sud America 1
Totale 5.669
Nazione #
IT - Italia 1.680
IE - Irlanda 1.539
US - Stati Uniti d'America 1.265
SE - Svezia 378
UA - Ucraina 342
IN - India 108
FI - Finlandia 103
HK - Hong Kong 69
CN - Cina 58
BE - Belgio 37
FR - Francia 17
GB - Regno Unito 14
RU - Federazione Russa 9
TR - Turchia 9
EU - Europa 6
SG - Singapore 6
DE - Germania 4
CZ - Repubblica Ceca 2
IR - Iran 2
KR - Corea 2
MX - Messico 2
SN - Senegal 2
AT - Austria 1
AU - Australia 1
BG - Bulgaria 1
CA - Canada 1
CL - Cile 1
IL - Israele 1
JP - Giappone 1
KZ - Kazakistan 1
LB - Libano 1
LI - Liechtenstein 1
NL - Olanda 1
PH - Filippine 1
RO - Romania 1
UZ - Uzbekistan 1
VN - Vietnam 1
Totale 5.669
Città #
Lecce 1.645
Dublin 1.539
Chandler 247
Jacksonville 202
Wayanad 106
Princeton 101
Des Moines 61
Central District 51
New York 40
Wilmington 40
Ann Arbor 36
Brussels 36
Ogden 31
West Jordan 23
Boardman 22
Hong Kong 18
Jinan 10
Kocaeli 9
Kyiv 9
Shenyang 9
Pavia 6
San Mateo 6
Ashburn 5
Beijing 4
Edinburgh 4
Los Angeles 4
Nanjing 4
Saint Petersburg 4
Haikou 3
Hebei 3
Lequile 3
Nanchang 3
Norwalk 3
Tianjin 3
Ardabil 2
Auburn Hills 2
Augusta 2
Changsha 2
Cormeilles-en-Parisis 2
Dakar 2
Guangzhou 2
Helsinki 2
Jiaxing 2
Leawood 2
London 2
Ningbo 2
Parma 2
Terralba 2
Anderlecht 1
Bangalore 1
Boydton 1
Bremen 1
Dallas 1
Hangzhou 1
Hanoi 1
Hanover 1
Lanzhou 1
Liverpool 1
Mexico 1
Monmouth Junction 1
Monterrey 1
Mountain View 1
Naga 1
New Delhi 1
Oral 1
Palagiano 1
Paris 1
Pescara 1
Pontedera 1
Prague 1
Puxian 1
Santiago 1
Seoul 1
Sofia 1
Taizhou 1
Tashkent 1
Tel Aviv 1
Timisoara 1
Toronto 1
Trieste 1
Vaduz 1
Vienna 1
Woodbridge 1
Yicheng 1
Zhengzhou 1
Totale 4.355
Nome #
Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy 93
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine 87
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 77
Hydrogen Transport Vapor Phase Epitaxy of CdTe on Hybrid Substrates for X-Ray Detector Applications. 75
Au-catalysed growth of GaAs and AlGaAs nanowires by liquid source metalorganic vapour phase epitaxy 75
Electric Field Properties of CdTe Nuclear Detectors 73
A MOVPE technology for fabrication of CdTe-based homoepitaxial p-i-n diode structures as nuclear radiation detectors 73
Au-catalysed growth of ZnO nanopillars by the Vapour-Liquid-Solid mechanism 73
Development of CdTe/CZT Epitaxial Technology for Fabrication of Large Area RT 1-100 keV X-ray Photon Detectors 72
Au-catalyst assisted MOVPE of GaAs nanowires using tertiarybuthylarsine as V-group precursor 72
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low temperature MOVPE of ZnSe, ZnS and ZnSSe 71
Au-catalysed MOVPE growth of GaAs/AlGaAs core-shell nanowires using TBA 71
Optical properties of MOVPE-grown ZnS epilayers on (100)GaAs 69
Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition 68
A novel CdTe/CZT epitaxial technology for large area RT 1 -100 keV X-ray photon detectors 67
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor 65
MOVPE growth and characterisation of CdTe layers on detector-grade(111)B-CdTe crystals 65
Lattice strain determination in MOVPE grown ZnTe epilayers on GaAs by RBS-channeling and reflectance spectroscopy 65
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. 64
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 64
Development of a homoepitaxial technology for fabrication of X-and gamma ray detectors based on CdTe p-i-n diodes 64
PRIN - Tecnologie di crescita e ottimizzazione spettroscopica di rivelatori di raggi X e Gamma basati su CdTe/CdZnTe. 64
A novel approach towards reduced growth temperatures and hydrogen incorporation in the MOVPE of ZnSe, ZnS and ZnSSe for blue LEDs and lasers 64
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001)GaAs 64
Morphology and crystallinity of homoepitaxial (100)ZnTe: interplay between surface ad-atom stoichiometry and planar defects nucleation during MOVPE 63
MOVPE growth and characterization of ZnTe epilayers on (001)ZnTe:P substrates 63
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range. 63
Effect of precursors stoichiometry on morphology, crystallinity and electrical properties of ZnTe epilayers MOVPE-grown on (100)GaAs 63
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications 63
Electric field distribution and charge transport properties in diode-like CdTe X-ray detectors 62
MOVPE growth of MgSe and ZnMgSe on (001)GaAs 62
Photocapacitance and photoconductivity of CdTe/CdS heterojunctions obtained by closed-tube chemical transport 62
Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy 62
Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor 62
A new method for the growth of CdTe crystals for RT X-ray photon detectors in the 1-100 keV range 62
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 61
Crystalline structure of ZnSSe epilayers grown on (100)GaAs by metaorganic vapour-phase epitaxy 61
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 61
Development of CdTe and CdZnTe semiconductor radiation detectors for astrophysical and medical applications 61
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 61
On hydrogen transport VPE_grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 60
MOVPE growth optimisation of CdTe epitaxial layersfor p-i-n diode X-ray detector fabrication 60
A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS 59
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 59
Preparation and characterization of In2Se3 crystals 59
Lattice strain and band offset determination in ZnSe/ZnS short -period superlattices grown by MOVPE on (001)GaAs 58
A new method for the growth of CdTe crystals for RT photon detector in the 1-100 KeV range 58
Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100)GaAs 58
Structural characterization of CdS epilayers by channeling Rutherford backscattering spectrometry 58
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE 57
Pyrolytic MOVPE of CdTe:I on semi-insulating (111)B-CdTe crystals for fabrication of nuclear radiation detectors 57
Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results 57
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 56
Hydrogen transport vapour growth and properties of thick CdTe epilayers for RT X-ray detector applications 56
Study on Instability Phenomena in CdTe Diode-like Detectors 56
Dimethyldiselenide and diethyldisulphide as novel Se and S precursors for the low-temperature MOVPE growth of ZnSe, ZnS and ZnSSe 56
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 55
Lattice strain and band offsets determination in ZnSe/ZnS short-period superlattices grown by MOVPE on (100)GaAs 55
MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates 54
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies 54
MOVPE growth and optical characterization of ZnS, ZnSe and ZnS/ZnSe multiple quantum wells 54
Low pressure MOVPE growth of ZnS epilayers by using dimethyldisulphide precursor 53
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 53
Non destructive characterization of MOVPE-grown CdTe and ZnTe epilayers by nanosecond and picosecond 52
Structural and optical properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSE multiple quantum wells 52
Progetto Nazionale ASI - Rivelatori ad alto Z: Studio e realizzazione di un prototipo di rivelatore X epitassiale per applicazioni astrofisiche. 52
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor phase epitaxy 52
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE 51
Surface structural and morphological characterization of ZnTe epilayers grown on {100}GaAs by MOVPE 50
Lattice strain analysis of VPE-Grown ZnS epitaxial layers on (001)GaAs by RBS-channeling and high resolution XRD measurements 50
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. II anno 49
Studies of carrier dynamics in epitaxial heterostructures by non linear optical and microwaves techniques 48
Study on instability phenomena in CdTe diode-like detectors 48
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors 48
Vapor phase epitaxy growth of CdTe epilayers for RT x-ray detectors 47
Functional validation of novel Se and S alkyl precursors for the low temperature pyrolytic MOVPE growth of ZnSe, ZnS and ZnSSe 47
Non-radiative and radiative recombination processes of ZnS epitaxial layers 47
Low temperature MOVPE growth and characterisation of ZnS using diethyldisulphide as sulphur precursor 47
Nonradiative and radiative recombination processes of ZnS epitaxial layers 46
Progetto INFN - Spectroscopic Improvements by Novel Electrode Configurations (SINEC) 46
Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE 45
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 45
Nonequilibrium carrier dynamics in MOVPE-grown homoepitaxial ZnTe layers and substrate material 44
MOVPE Growth of Wide Band-Gap II—VI Compounds for Near-UV and Deep-Blue Light Emitting Devices 44
Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors 44
PRIN - Sviluppo di rivelatori a CdTe per raggi X e gamma di nuova generazione: rivelatori a contatti epitassiali. 43
Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100)GaAs 43
Investigation of ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy on VGF-grown (100)ZnTe:P wafers 42
Homoepitaxy of ZnTe on (100) oriented substrates: technology issues and MOVPE growth aspects 42
Study on Instability Phenomena in CdTe Diode-like Detectors 42
Self-organized growth of ZnTe nanoscale islands on (001)GaAs 41
Photoluminescence of CVD grown CdS epilayers on CdTe substrates 41
Nondestructive characterisation of MOVPE-grown CdTe and ZnTe epilayers by picosecond and nanosecond "excite-probe" techniques 41
Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques 40
Effects of ad-atom stoichiometry and stacking faults nucleation on the structure and morphology of MOVPE-grown (100)ZnTe homoepitaxial layers 39
PRIN - Tecnologie di crescita e ottimizzazione spettroscopica di rivelatori di raggi X e Gamma basati su CdTe/CdZnTe. II anno 39
Intrinsic defects of ZnS epitaxial layers grown by MOVPE 39
MOVPE growth of MgSe and ZnMgSe on (100)GaAs 37
Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001)GaAs 36
Stranski–Krastanow MOVPE growth of nanoscale ZnTe islands on (001)GaAs 36
Totale 5.644
Categoria #
all - tutte 25.875
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.875


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019213 0 0 0 0 0 0 0 0 0 0 5 208
2019/2020952 3 102 2 104 50 271 87 170 29 26 106 2
2020/2021830 98 3 103 106 48 103 3 104 8 116 36 102
2021/2022409 4 10 25 59 74 1 6 41 6 5 34 144
2022/20232.415 117 133 82 54 119 118 37 67 1.615 5 46 22
2023/2024437 36 30 21 47 45 46 3 9 64 136 0 0
Totale 5.680