Sfoglia per Autore
Holographic nanopatterning of the organic semiconductor poly (p-phenylene vinylene) PPV
1998-01-01 G., Gigli; Rinaldi, Rosaria; C., Turco; Visconti, Paolo; R., Cingolani; F., Cacialli
Optical processes and electronic states in InGaAs/GaAs V-groove quantum wire lasers
1999-01-01 R., Cingolani; Rinaldi, Rosaria; Devittorio, M.; A., Passaseo; M., Degiorgi; Visconti, Paolo; C., Turco
Recombination in InGaAs/GaAs quantum wires lasers
1999-01-01 DE VITTORIO, Massimo; Rinaldi, Rosaria; A., Passaseo; M., DE GIORGI; M., Lomascolo; Visconti, Paolo; R., Cingolani; A., Taurino; M., Catalano; L., Decaro; L., Tapfer
Electrical, structural and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
2000-01-01 F., Yun; M. A., Reshchikov; K. M., Jones; Visconti, Paolo; H., Morkoc; S. S., Park; K. Y., Lee
Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition
2000-01-01 A., Convertino; Visconti, Paolo; R., Cingolani
Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching
2000-01-01 Visconti, Paolo; C., Turco; Rinaldi, Rosaria; Cingolani, Roberto
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
2000-01-01 Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; R., Cingolani; H., Morkoc; S. S., Park; K. Y., Lee
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
2000-01-01 Visconti, Paolo; K. M., Jones; M. A., Reshchikov; R., Cingolani; H., Morkoc; R. J., Molnar
Investigation of the Surface Polarity, Defects, Electrical and Optical Properties of GaN Grown by MBE, MOCVD, and HVPE
2001-01-01 Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; H., Morkoç; R. J., Molnar; A., Passaseo; R., Cingolani; S. S., Park; AND K. Y., Lee
Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers
2001-01-01 D., Huang; Visconti, Paolo; M. A., Reshchikov; F. YUN T., King; A., Baski; C. W., Litton; J., Jasinski; Z., LILIENTAL WEBER; H., Morkoc
A comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity
2001-01-01 F., Yun; D., Huang; M. A., Reshchikov; T., King; A. A., Baski; C. W., Litton; J., Jasinski; Z., LILIENTAL WEBER; Visconti, Paolo; H., Morkoç
Longitudinal Stark Effect in Parabolic Quantum Dots
2001-01-01 Rinaldi, Rosaria; DE GIORGI, M.; DE VITTORIO, Massimo; Melcarne, A.; Visconti, Paolo; Cingolani, R; Lipsanen, H.; Sopanen, M.; Drufva, T.; Tulkki, J.
Structural, Optical and Electrical Properties of GaN Films Grown by Metalorganic Chemical Vapor Deposition on Sapphire
2001-01-01 Visconti, Paolo; M. A., Reshchikov; F., Yun; K. M., Jones; H., Morkoc; A., Passaseo; E., Piscopiello; A., Pomarico; R., Cingolani; M., Catalano; M., Lomascolo
Characterization of Inversion Domains in GaN by Electric Force Microscopy in conjunction with Transmission Electron Microscopy and Wet Chemical Etching
2001-01-01 F., Yun; Visconti, Paolo; K. M., Jones; A. A., Baski; H., Morkoç; A., Passaseo; E., Piscopiello; M., Catalano; R., Cingolani
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
2001-01-01 D., Huang; Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; A. A., Baski; T., King; H., Morkoç
Characterization of very low Defect-density Free-standing GaN Substrate Grown by Hydride Vapor Phase Epitaxy
2001-01-01 Visconti, Paolo; M. A., Reshchikov; K. M., Jones; F., Yun; R., Cingolani; H., Morkoç; J., Jasinski; W., Swider; Z., LILIENTAL WEBER; S. S., Park; K. Y., Lee
Highly selective photo-electrochemical etching of nitride materials for defect investigation and device fabrication
2001-01-01 Visconti, Paolo; M. A., Reshchikov; K. M., Jones; D. F., Wang; R., Cingolani; H., Morkoç; R. J., Molnar; D. J., Smith
Investigation of Buffer Layers for GaN grown by MBE
2001-01-01 F., Yun; M. A., Reshchikov; Visconti, Paolo; K. M., Jones; D. F., Wang; M., Redmond; J., Cui; C. W., Litton; AND H., Morkoç
Recombination at surface states in GaN
2001-01-01 M. A., Reshchikov; Visconti, Paolo; K. M., Jones; H., Morkoc; R. J., Molnar; C. W., Litton
Photoluminescence Study of Defects in GaN grown by Molecular Beam Epitaxy
2001-01-01 M. A., Reshchikov; M., Zhang; J., Cui; Visconti, Paolo; F., Yun; H., Morkoç
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Holographic nanopatterning of the organic semiconductor poly (p-phenylene vinylene) PPV | 1-gen-1998 | G., Gigli; Rinaldi, Rosaria; C., Turco; Visconti, Paolo; R., Cingolani; F., Cacialli | |
Optical processes and electronic states in InGaAs/GaAs V-groove quantum wire lasers | 1-gen-1999 | R., Cingolani; Rinaldi, Rosaria; Devittorio, M.; A., Passaseo; M., Degiorgi; Visconti, Paolo; C., Turco | |
Recombination in InGaAs/GaAs quantum wires lasers | 1-gen-1999 | DE VITTORIO, Massimo; Rinaldi, Rosaria; A., Passaseo; M., DE GIORGI; M., Lomascolo; Visconti, Paolo; R., Cingolani; A., Taurino; M., Catalano; L., Decaro; L., Tapfer | |
Electrical, structural and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy | 1-gen-2000 | F., Yun; M. A., Reshchikov; K. M., Jones; Visconti, Paolo; H., Morkoc; S. S., Park; K. Y., Lee | |
Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition | 1-gen-2000 | A., Convertino; Visconti, Paolo; R., Cingolani | |
Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching | 1-gen-2000 | Visconti, Paolo; C., Turco; Rinaldi, Rosaria; Cingolani, Roberto | |
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration | 1-gen-2000 | Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; R., Cingolani; H., Morkoc; S. S., Park; K. Y., Lee | |
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching | 1-gen-2000 | Visconti, Paolo; K. M., Jones; M. A., Reshchikov; R., Cingolani; H., Morkoc; R. J., Molnar | |
Investigation of the Surface Polarity, Defects, Electrical and Optical Properties of GaN Grown by MBE, MOCVD, and HVPE | 1-gen-2001 | Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; H., Morkoç; R. J., Molnar; A., Passaseo; R., Cingolani; S. S., Park; AND K. Y., Lee | |
Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers | 1-gen-2001 | D., Huang; Visconti, Paolo; M. A., Reshchikov; F. YUN T., King; A., Baski; C. W., Litton; J., Jasinski; Z., LILIENTAL WEBER; H., Morkoc | |
A comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity | 1-gen-2001 | F., Yun; D., Huang; M. A., Reshchikov; T., King; A. A., Baski; C. W., Litton; J., Jasinski; Z., LILIENTAL WEBER; Visconti, Paolo; H., Morkoç | |
Longitudinal Stark Effect in Parabolic Quantum Dots | 1-gen-2001 | Rinaldi, Rosaria; DE GIORGI, M.; DE VITTORIO, Massimo; Melcarne, A.; Visconti, Paolo; Cingolani, R; Lipsanen, H.; Sopanen, M.; Drufva, T.; Tulkki, J. | |
Structural, Optical and Electrical Properties of GaN Films Grown by Metalorganic Chemical Vapor Deposition on Sapphire | 1-gen-2001 | Visconti, Paolo; M. A., Reshchikov; F., Yun; K. M., Jones; H., Morkoc; A., Passaseo; E., Piscopiello; A., Pomarico; R., Cingolani; M., Catalano; M., Lomascolo | |
Characterization of Inversion Domains in GaN by Electric Force Microscopy in conjunction with Transmission Electron Microscopy and Wet Chemical Etching | 1-gen-2001 | F., Yun; Visconti, Paolo; K. M., Jones; A. A., Baski; H., Morkoç; A., Passaseo; E., Piscopiello; M., Catalano; R., Cingolani | |
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy | 1-gen-2001 | D., Huang; Visconti, Paolo; K. M., Jones; M. A., Reshchikov; F., Yun; A. A., Baski; T., King; H., Morkoç | |
Characterization of very low Defect-density Free-standing GaN Substrate Grown by Hydride Vapor Phase Epitaxy | 1-gen-2001 | Visconti, Paolo; M. A., Reshchikov; K. M., Jones; F., Yun; R., Cingolani; H., Morkoç; J., Jasinski; W., Swider; Z., LILIENTAL WEBER; S. S., Park; K. Y., Lee | |
Highly selective photo-electrochemical etching of nitride materials for defect investigation and device fabrication | 1-gen-2001 | Visconti, Paolo; M. A., Reshchikov; K. M., Jones; D. F., Wang; R., Cingolani; H., Morkoç; R. J., Molnar; D. J., Smith | |
Investigation of Buffer Layers for GaN grown by MBE | 1-gen-2001 | F., Yun; M. A., Reshchikov; Visconti, Paolo; K. M., Jones; D. F., Wang; M., Redmond; J., Cui; C. W., Litton; AND H., Morkoç | |
Recombination at surface states in GaN | 1-gen-2001 | M. A., Reshchikov; Visconti, Paolo; K. M., Jones; H., Morkoc; R. J., Molnar; C. W., Litton | |
Photoluminescence Study of Defects in GaN grown by Molecular Beam Epitaxy | 1-gen-2001 | M. A., Reshchikov; M., Zhang; J., Cui; Visconti, Paolo; F., Yun; H., Morkoç |
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