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EnglishWe have fabricated amorphous hydrogenated carbon films by rf plasma enhanced chemical vapor deposition with very low ion bombardment energy. We demonstrate that the optical gap of the films can be tuned in a wide range, from 3.46 up to 4.95 eV, i.e., close to the diamond gap ~5.5 eV!, by proper control of the negative dc self-bias voltage. This behavior suggests that a dramatic reduction in the content and clustering of the sp2 sites occurs by lowering the ion bombardment energy.
| Titolo: | Wide band gap amorphous hydrogenated carbon films grown by plasma enhanced chemical vapor deposition | |
| Autori: | ||
| Data di pubblicazione: | 2000 | |
| Rivista: | ||
| Abstract: | We have fabricated amorphous hydrogenated carbon films by rf plasma enhanced chemical vapor deposition with very low ion bombardment energy. We demonstrate that the optical gap of the films can be tuned in a wide range, from 3.46 up to 4.95 eV, i.e., close to the diamond gap ~5.5 eV!, by proper control of the negative dc self-bias voltage. This behavior suggests that a dramatic reduction in the content and clustering of the sp2 sites occurs by lowering the ion bombardment energy. | |
| Handle: | http://hdl.handle.net/11587/107331 | |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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