Structural, electrical and optical properties of free-standing 200-µm thick GaN films grown by hydride vapor phase epitaxy (HVPE) have been investigated. After laser lift-off, the GaN substrates were mechanically polished on both Ga and N-sides and dry etched only on the Ga side to obtain a smooth epi-ready surface. Hot H3PO4 chemical etching on both surfaces was used to reveal the defect sites, which appeared as hexagonal pits. The etched surfaces were then examined by atomic force microscopy.
Characterization of very low Defect-density Free-standing GaN Substrate Grown by Hydride Vapor Phase Epitaxy
VISCONTI, Paolo;
2001-01-01
Abstract
Structural, electrical and optical properties of free-standing 200-µm thick GaN films grown by hydride vapor phase epitaxy (HVPE) have been investigated. After laser lift-off, the GaN substrates were mechanically polished on both Ga and N-sides and dry etched only on the Ga side to obtain a smooth epi-ready surface. Hot H3PO4 chemical etching on both surfaces was used to reveal the defect sites, which appeared as hexagonal pits. The etched surfaces were then examined by atomic force microscopy.File in questo prodotto:
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