Properties of GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on cplane of sapphire have been investigated using atomic force microscopy (AFM), wet etching for defect investigation, transmission electron microscopy (TEM), high-resolution X-ray diffraction, Hall effect measurements and low-temperature photoluminescence (PL).
Structural, Optical and Electrical Properties of GaN Films Grown by Metalorganic Chemical Vapor Deposition on Sapphire
VISCONTI, Paolo;
2001-01-01
Abstract
Properties of GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on cplane of sapphire have been investigated using atomic force microscopy (AFM), wet etching for defect investigation, transmission electron microscopy (TEM), high-resolution X-ray diffraction, Hall effect measurements and low-temperature photoluminescence (PL).File in questo prodotto:
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