Tungstensilicide was synthesized by multipulse XeCl laserirradiation of co-sputtered WSi mixtures 140 and 460 nm thick on single-crystal silicon wafers. It is shown that at certain equilibria between contradictory influences of the depth of melting, stress generation, intermixing and crystallization it is possible to grow good quality tungstensilicide. Silicidelayers with only one crystalline phase (WSi2) and with a resistivity of 170 μω cm were obtained after irradiation of a WSi film 140 nm thick with 10 laser pulses at a fluence of 0.9 J cm−2.

SYNTHESIS OF TUNGSTEN SILICIDE BY PULSED LASER IRRADIATION OF SPUTTERED ALLOY LAYERS

MARTINO, Maurizio;PERRONE, Alessio
1993

Abstract

Tungstensilicide was synthesized by multipulse XeCl laserirradiation of co-sputtered WSi mixtures 140 and 460 nm thick on single-crystal silicon wafers. It is shown that at certain equilibria between contradictory influences of the depth of melting, stress generation, intermixing and crystallization it is possible to grow good quality tungstensilicide. Silicidelayers with only one crystalline phase (WSi2) and with a resistivity of 170 μω cm were obtained after irradiation of a WSi film 140 nm thick with 10 laser pulses at a fluence of 0.9 J cm−2.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/108515
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