Proton irradiation on Hydrogenated Amorphous Silicon flexible devices

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3-MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2- μ m-thick n-i-p diode having a 5×5 mm area. The second device was a 5- μ m-thick charge-selective contact (CSC) detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for CSCs and n-i-p devices. The effect of annealing for partial performance recovery at 100 ∘ C for 12 h was also studied, and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.