In this paper, we report the successful growth of MgF2 thin films on Si and sapphire (Al2O3) substrates at room temperature by direct laser ablation of a pure MgF2 target. The irradiations were performed at high vacuum (10-5 Pa) using the forth harmonic of a Neodymium-doped Yttrium Aluminum Garnet (Nd:YAG) laser (λ = 266 nm, τFWHM = 7 ns) with energy density of about 10 J/cm2. Uniform films, with a good adhesion on the substrate were obtained. The average ablation and deposition rates resulted to be 1.1 μg/pulse and 0.03 Å/pulse, respectively. Different diagnostic techniques were used to study the morphology and chemical composition of deposited films.
Deposition of MgF2 Thin Films by Pulsed Laser Ablation Technique
LORUSSO, ANTONELLA;PERRONE, Alessio
2011-01-01
Abstract
In this paper, we report the successful growth of MgF2 thin films on Si and sapphire (Al2O3) substrates at room temperature by direct laser ablation of a pure MgF2 target. The irradiations were performed at high vacuum (10-5 Pa) using the forth harmonic of a Neodymium-doped Yttrium Aluminum Garnet (Nd:YAG) laser (λ = 266 nm, τFWHM = 7 ns) with energy density of about 10 J/cm2. Uniform films, with a good adhesion on the substrate were obtained. The average ablation and deposition rates resulted to be 1.1 μg/pulse and 0.03 Å/pulse, respectively. Different diagnostic techniques were used to study the morphology and chemical composition of deposited films.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
