We demonstrate that 20 nm thick indium tin oxide (ITO) layers deposited by pulsed laser deposition present sheet resistance as low as 130 ohm/ and very uniform morphology, with an average roughness of about 0.4 nm, and peak-to-valley roughness as low as 8.2 nm. This good uniformity allowed us to realize a single layer polyfluorene active waveguide with both top and bottom ITO electrodes showing clear amplified spontaneous emission and electrode induced losses as low as 3.0 cm−1.We investigated the effects of hole injection in the ASE intensity concluding that complete gain suppression due to polaron absorption would take place for current density of about 360 mA cm−2.

Low electrode induced optical losses in organic active single layer PFO waveguides with two Indium Tin Oxide electrodes deposited by Pulsed Laser Deposition

LATTANTE, SANDRO;CARICATO, Anna Paola;MARTINO, Maurizio;ANNI, Marco
2006

Abstract

We demonstrate that 20 nm thick indium tin oxide (ITO) layers deposited by pulsed laser deposition present sheet resistance as low as 130 ohm/ and very uniform morphology, with an average roughness of about 0.4 nm, and peak-to-valley roughness as low as 8.2 nm. This good uniformity allowed us to realize a single layer polyfluorene active waveguide with both top and bottom ITO electrodes showing clear amplified spontaneous emission and electrode induced losses as low as 3.0 cm−1.We investigated the effects of hole injection in the ASE intensity concluding that complete gain suppression due to polaron absorption would take place for current density of about 360 mA cm−2.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/109220
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