lavoro con un premio Nobel: A. M. PROKHOROV The synthesis of stable and adherent TiSi2 layers by one-step laser irradiation of Ti deposited on Si wafers is reported. A new thermal self-aligned effect is observed. By multipulse excimer laser irradiation, a regime was obtained whereby the Ti covering the Si substrate was completely reacted while the Ti covering the SiO2 layer was completely expelled by vaporization.

Direct Synthesis of TiSi2 By A Laser Thermal Self-Aligned Process

LEGGIERI, Gilberto;MARTINO, Maurizio;
1992

Abstract

lavoro con un premio Nobel: A. M. PROKHOROV The synthesis of stable and adherent TiSi2 layers by one-step laser irradiation of Ti deposited on Si wafers is reported. A new thermal self-aligned effect is observed. By multipulse excimer laser irradiation, a regime was obtained whereby the Ti covering the Si substrate was completely reacted while the Ti covering the SiO2 layer was completely expelled by vaporization.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/108557
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