ONE STEP IN-DIFFUSION AS A RESULT OF MULTIPULSE LASER IRRADIATION OF LINBO3 SINGLE CRYSTALLINE SUBSTRATES COVERED WITH TI DEPOSITS. ON THE EFFECT OF THE RADIATION WAVELENGTH

We studied Ti in-diffusion as an effect of multipulse laser irradiation, in either visible of ultraviolet (u.v.) spectral ranges, of LiNbO3 single-crystalline structures with Ti coatings of two different thicknesses. It is shown that while u.v. (excimer, λ ≈ 308 nm) laser irradiation causes a complete expulsion of the Ti deposit, the visible (ruby, λ ≈ 694·3 nm) laser irradiation at intermediate incident laser fluence (up to ≈ 0·7 J cm−2) promotes efficient Ti in-diffusion from the thin (400 Å width) Ti deposit down to a micrometre range implantation depth.