The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.
Direct Oxinitride Synthesis By Multipulse Excimer Laser Irradiation Of Silicon Wafer In Nitrogen Containing Ambient Environment
MARTINO, Maurizio;NASSISI, Vincenzo;
1990-01-01
Abstract
The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.File in questo prodotto:
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