The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.
Titolo: | Direct Oxinitride Synthesis By Multipulse Excimer Laser Irradiation Of Silicon Wafer In Nitrogen Containing Ambient Environment |
Autori: | |
Data di pubblicazione: | 1990 |
Rivista: | |
Abstract: | The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics. |
Handle: | http://hdl.handle.net/11587/108498 |
Appare nelle tipologie: | Articolo pubblicato su Rivista |
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