Sfoglia per Rivista JOURNAL OF APPLIED PHYSICS
Deep level spectroscopy in p-GaSe single crystals
1990-01-01 Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio
Deep levels in indium selenide single crystals doped with iodine
1995-01-01 Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro
Deposition of high Quality TiN Films by Excimer Laser Ablation in Reactive Gas
1993-01-01 I. N., Mihailescu; N., Chitica; L. C., Nistor; M., Popescu; I., Ursu; V. S., Teodorescu; A., Andrei; A., Barborica; A., Luches; DE GIORGI, Maria Luisa; Perrone, Alessio; B., Dubreuil; J., Hermann
Determination of band-offset enhanced in InGaAsP-InGaAsP strained multiquantum wells by photocurrent measurements
2005-01-01 D., Tari'; M., DE GIORGI; Cingolani, Roberto; E., Foti; C., Coriasso
Determination of electron traps in tin disulphide crystals by thermally stimulated current measurements
1996-01-01 Micocci, Gioacchino; Tepore, Antonio
Determination of minority carrier lifetime in silicon solar cells from laser transient photovoltaic effect
1981-01-01 DI GIULIO, Massimo; S., Galassini; G., Micocci; Tepore, Antonio; C., Manfredotti
Diffusion coefficient of electrons in silicon
1981-01-01 Brunetti, R.; Jacoboni, C.; F., Nava; Reggiani, Lino; G., Bosman; Zijlstra, R. J. J.
Diffusion coefficient of holes in Ge
1978-01-01 Reggiani, Lino; C., Canali; F., Nava; A., Alberigi Quaranta
Diffusion coefficient of holes in silicon by Monte Carlo simulation
1986-01-01 Reggiani, Lino; R., Brunetti; E., Normantas
Direct Carbide Synthesys by Multipulse Excimer Laser Treatment of Ti Samples in Ambient CH4 Gas at Superatmospheric Pressure
1994-01-01 I. N., Mihailescu; N., Chitica; V. S., Teodorescu; M., Popescu; DE GIORGI, Maria Luisa; A., Luches; Perrone, Alessio; Boulmer Leborgne, C. h.; J., Hermann; B., Dubreuil; S., Udrea; A., Barborica; I., Iova
Direct Nitridation of a Silicon Surface by Multipulse Excimer Laser Irradiation in a Nitrogen-containing Ambient Gas
1991-01-01 I. N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; D'Anna, Emilia; G., Leggieri; Luches, Armando; M., Martino; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek
Direct Nitridation of a Silicon Surface by Multipulse Excimer Laser Irradiation in a Nitrogen-Containing Ambient Gas.
1991-01-01 N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; E., Danna; Leggieri, Gilberto; Luches, Armando; M., Martino; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek
Direct Nitridation Of Si Surface By Multi-Pulse Excimer Laser Irradiation In A Nitrogen Containing Ambient Gas
1991-01-01 I. N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; E., D’Anna; G., Leggieri; A., Luches; Martino, Maurizio; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek
Direct Oxinitride Synthesis By Multipulse Excimer Laser Irradiation Of Silicon Wafer In Nitrogen Containing Ambient Environment
1990-01-01 V., Craciun; I. N., Mihailescu; Oncioiu, G. H.; A., Luches; Martino, Maurizio; Nassisi, Vincenzo; E., Radiotis; A. V., Drigo; S., Ganatsios
Discharge impedance of an ultraviolet preionized XeCl laser
1991-01-01 Leo, Mario; R. A., Leo; Nassisi, Vincenzo; L. MARSIGLIANTE AND A., Pecoraro
Droplet distribution from melt displacement and ejection mechanism during Al ns-laser ablation and deposition experiments: Influence of laser spot position
2014-01-01 Cultrera, Luca; Lorusso, Antonella; Maiolo, BERLINDA MARIA TERESA; L., Cangueiro; R., Vilar; Perrone, Alessio
Effect of a perturbed acoustic-phonon distribution on hot-electron transport: a Monte Carlo analysis
1987-01-01 P., Bordone; C., Jacoboni; P., Lugli; Reggiani, Lino; P., Kocevar
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy.
2004-01-01 M., Traversa; Lovergine, Nicola; Prete, Paola; K., Yoshino; T., DI LUCCIO; G., Scalia; M., Pentimalli; L., Tapfer; P., Morales; Mancini, Anna Maria
"Electrical properties of n-GaSe single crystals doped with chlorine"
1997-01-01 Micocci, G; Serra, Antonio; Tepore, A.
Electronic structure of double stacked InAs/GaAs quantum dots: Experiment and theory
2007-01-01 Persano, A; Cola, A; Taurino, A; Catalano, M; Lomascolo, M; Convertino, A; Leo, G; Cerri, L; Vasanelli, Lorenzo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Deep level spectroscopy in p-GaSe single crystals | 1-gen-1990 | Micocci, Gioacchino; Siciliano, Pietro; Tepore, Antonio | |
Deep levels in indium selenide single crystals doped with iodine | 1-gen-1995 | Micocci, Gioacchino; Tepore, Antonio; Rella, Roberto; Siciliano, Pietro | |
Deposition of high Quality TiN Films by Excimer Laser Ablation in Reactive Gas | 1-gen-1993 | I. N., Mihailescu; N., Chitica; L. C., Nistor; M., Popescu; I., Ursu; V. S., Teodorescu; A., Andrei; A., Barborica; A., Luches; DE GIORGI, Maria Luisa; Perrone, Alessio; B., Dubreuil; J., Hermann | |
Determination of band-offset enhanced in InGaAsP-InGaAsP strained multiquantum wells by photocurrent measurements | 1-gen-2005 | D., Tari'; M., DE GIORGI; Cingolani, Roberto; E., Foti; C., Coriasso | |
Determination of electron traps in tin disulphide crystals by thermally stimulated current measurements | 1-gen-1996 | Micocci, Gioacchino; Tepore, Antonio | |
Determination of minority carrier lifetime in silicon solar cells from laser transient photovoltaic effect | 1-gen-1981 | DI GIULIO, Massimo; S., Galassini; G., Micocci; Tepore, Antonio; C., Manfredotti | |
Diffusion coefficient of electrons in silicon | 1-gen-1981 | Brunetti, R.; Jacoboni, C.; F., Nava; Reggiani, Lino; G., Bosman; Zijlstra, R. J. J. | |
Diffusion coefficient of holes in Ge | 1-gen-1978 | Reggiani, Lino; C., Canali; F., Nava; A., Alberigi Quaranta | |
Diffusion coefficient of holes in silicon by Monte Carlo simulation | 1-gen-1986 | Reggiani, Lino; R., Brunetti; E., Normantas | |
Direct Carbide Synthesys by Multipulse Excimer Laser Treatment of Ti Samples in Ambient CH4 Gas at Superatmospheric Pressure | 1-gen-1994 | I. N., Mihailescu; N., Chitica; V. S., Teodorescu; M., Popescu; DE GIORGI, Maria Luisa; A., Luches; Perrone, Alessio; Boulmer Leborgne, C. h.; J., Hermann; B., Dubreuil; S., Udrea; A., Barborica; I., Iova | |
Direct Nitridation of a Silicon Surface by Multipulse Excimer Laser Irradiation in a Nitrogen-containing Ambient Gas | 1-gen-1991 | I. N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; D'Anna, Emilia; G., Leggieri; Luches, Armando; M., Martino; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek | |
Direct Nitridation of a Silicon Surface by Multipulse Excimer Laser Irradiation in a Nitrogen-Containing Ambient Gas. | 1-gen-1991 | N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; E., Danna; Leggieri, Gilberto; Luches, Armando; M., Martino; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek | |
Direct Nitridation Of Si Surface By Multi-Pulse Excimer Laser Irradiation In A Nitrogen Containing Ambient Gas | 1-gen-1991 | I. N., Mihailescu; V., Craciun; L. C., Nistor; V. S., Teodorescu; E., D’Anna; G., Leggieri; A., Luches; Martino, Maurizio; Perrone, Alessio; A. V., Drigo; S., Ganatsios; J., Zemek | |
Direct Oxinitride Synthesis By Multipulse Excimer Laser Irradiation Of Silicon Wafer In Nitrogen Containing Ambient Environment | 1-gen-1990 | V., Craciun; I. N., Mihailescu; Oncioiu, G. H.; A., Luches; Martino, Maurizio; Nassisi, Vincenzo; E., Radiotis; A. V., Drigo; S., Ganatsios | |
Discharge impedance of an ultraviolet preionized XeCl laser | 1-gen-1991 | Leo, Mario; R. A., Leo; Nassisi, Vincenzo; L. MARSIGLIANTE AND A., Pecoraro | |
Droplet distribution from melt displacement and ejection mechanism during Al ns-laser ablation and deposition experiments: Influence of laser spot position | 1-gen-2014 | Cultrera, Luca; Lorusso, Antonella; Maiolo, BERLINDA MARIA TERESA; L., Cangueiro; R., Vilar; Perrone, Alessio | |
Effect of a perturbed acoustic-phonon distribution on hot-electron transport: a Monte Carlo analysis | 1-gen-1987 | P., Bordone; C., Jacoboni; P., Lugli; Reggiani, Lino; P., Kocevar | |
Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe depositedby metalorganic vapor phase epitaxy. | 1-gen-2004 | M., Traversa; Lovergine, Nicola; Prete, Paola; K., Yoshino; T., DI LUCCIO; G., Scalia; M., Pentimalli; L., Tapfer; P., Morales; Mancini, Anna Maria | |
"Electrical properties of n-GaSe single crystals doped with chlorine" | 1-gen-1997 | Micocci, G; Serra, Antonio; Tepore, A. | |
Electronic structure of double stacked InAs/GaAs quantum dots: Experiment and theory | 1-gen-2007 | Persano, A; Cola, A; Taurino, A; Catalano, M; Lomascolo, M; Convertino, A; Leo, G; Cerri, L; Vasanelli, Lorenzo |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile