We experimentally determine the band offset of strain-compensated InGaAsP-InGaAsP multiquantum-well (MQW) heterostructures, emitting at 1.55 mum, that were grown by metal-organic chemical vapor deposition. A band offset value of about 56% is found for the conduction band, which is higher than the value reported for the unstrained structure. The temperature dependence of the photoluminescence intensity shows that the unipolar detrapping of carriers in such MQWs is more efficient than the thermal activation of excitons. (C) 2005 American Institute of Physics

Determination of band-offset enhanced in InGaAsP-InGaAsP strained multiquantum wells by photocurrent measurements

CINGOLANI, Roberto;
2005

Abstract

We experimentally determine the band offset of strain-compensated InGaAsP-InGaAsP multiquantum-well (MQW) heterostructures, emitting at 1.55 mum, that were grown by metal-organic chemical vapor deposition. A band offset value of about 56% is found for the conduction band, which is higher than the value reported for the unstrained structure. The temperature dependence of the photoluminescence intensity shows that the unipolar detrapping of carriers in such MQWs is more efficient than the thermal activation of excitons. (C) 2005 American Institute of Physics
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/107806
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