Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 μm) to minimize capacitance, a small pixel size (36.4× 36.4 μm2), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of 1×1015 1 MeV neq/cm2, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of 1×1015 1 MeV neq/cm2,.
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