The dielectric properties of YCTO bulk capacitors were investigated as a function of temperature from 25 degrees C to 150 degrees C and at microwave frequencies in comparison to a SiO2 bulk sample. The results confirm the high-k character of the YCTO ceramic, in addition to the low AC conductivity, namely epsilon' = 40.1 and sigma = 6 x 10(-8) S cm(-1) at 1 MHz, and show a weak frequency and temperature (25 degrees C-150 degrees C) dependence. A temperature coefficient value of -601 ppm degrees C-1 for the dielectric constant (TC epsilon') was estimated at 100 kHz. In the GHz regime, a comparison with bulk SiO2 confirms the higher YCTO dielectric permittivity. These results demonstrate high-k YCTO ceramic as a very promising material with high potentiality for electronic applications.
RF and microwave dielectric response investigation of high-k yttrium copper titanate ceramic for electronic applications
Leo, Angelo;Monteduro, Anna Grazia;Rizzato, Silvia;Maruccio, Giuseppe
2018-01-01
Abstract
The dielectric properties of YCTO bulk capacitors were investigated as a function of temperature from 25 degrees C to 150 degrees C and at microwave frequencies in comparison to a SiO2 bulk sample. The results confirm the high-k character of the YCTO ceramic, in addition to the low AC conductivity, namely epsilon' = 40.1 and sigma = 6 x 10(-8) S cm(-1) at 1 MHz, and show a weak frequency and temperature (25 degrees C-150 degrees C) dependence. A temperature coefficient value of -601 ppm degrees C-1 for the dielectric constant (TC epsilon') was estimated at 100 kHz. In the GHz regime, a comparison with bulk SiO2 confirms the higher YCTO dielectric permittivity. These results demonstrate high-k YCTO ceramic as a very promising material with high potentiality for electronic applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
