Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition temperatures below 580 °C. The nanostructures were discernable at temperatures above 620 °C. Pure InSe nanowires were obtained at the deposition temperature of 660 °C for 50 min. The diameters of the nanowires were from 50 to 240 nm and their lengths were up to several micrometers. X-ray diffraction spectrum reveals that the synthesized products were single-crystalline of the β-phase hexagonal structure of InSe with lattice constants a = 4.006 Å and c = 16.642 Å. The strong peak due to the reflection from the (004) crystal plane reveals that most nanowires grow with a strong preferred orientation
Synthesis and characterization of indium monoselenide (InSe) nanowires
SICILIANO, Tiziana;TEPORE, Antonio;GENGA, Alessandra;MICOCCI, Gioacchino;SICILIANO, Maria;FILIPPO, Emanuela
2011-01-01
Abstract
Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition temperatures below 580 °C. The nanostructures were discernable at temperatures above 620 °C. Pure InSe nanowires were obtained at the deposition temperature of 660 °C for 50 min. The diameters of the nanowires were from 50 to 240 nm and their lengths were up to several micrometers. X-ray diffraction spectrum reveals that the synthesized products were single-crystalline of the β-phase hexagonal structure of InSe with lattice constants a = 4.006 Å and c = 16.642 Å. The strong peak due to the reflection from the (004) crystal plane reveals that most nanowires grow with a strong preferred orientationI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
