In2O3 microrods were grown by thermal oxidation of InSe single crystal under a mixture of argon−oxygen flow without the presence of a catalyst. Microrods were obtained at the temperature of about 640 °C after a thermal treatment of 180 min. The morphology, structure, and composition of the prepared materials were studied by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction spectroscopy (XRD). The microrods had a hexagonal cross-section with a diameter range of 1−3 μm and a length of between 20 and 30 μm. Structural analysis showed that the microstructures were cubic In2O3 crystal with a lattice constant of a = 10.115 Å. The possible mechanism of the formation of In2O3 microstructures is also discussed in this work
Formation of In2O3 microrods in thermal treated InSe single crystal
SICILIANO, Tiziana;TEPORE, Antonio;MICOCCI, Gioacchino;GENGA, Alessandra;SICILIANO, Maria;FILIPPO, Emanuela
2011-01-01
Abstract
In2O3 microrods were grown by thermal oxidation of InSe single crystal under a mixture of argon−oxygen flow without the presence of a catalyst. Microrods were obtained at the temperature of about 640 °C after a thermal treatment of 180 min. The morphology, structure, and composition of the prepared materials were studied by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and X-ray diffraction spectroscopy (XRD). The microrods had a hexagonal cross-section with a diameter range of 1−3 μm and a length of between 20 and 30 μm. Structural analysis showed that the microstructures were cubic In2O3 crystal with a lattice constant of a = 10.115 Å. The possible mechanism of the formation of In2O3 microstructures is also discussed in this workI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
