Stoichiometric CdSe nanotubes (NTs) with a length of ∼ 700 nm have been successfully grown by one-step electrochemical technique into Anodic Alumina Membranes. Ciclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd2+ ions and SeO2. The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while Micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼ 0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with direct band gap of 1.75 eV and n-type semiconducting behaviour.
One-step electrochemical synthesis and physico-chemical characterization of CdSe nanotubes
BOCCHETTA, PATRIZIA
Conceptualization
;
2013-01-01
Abstract
Stoichiometric CdSe nanotubes (NTs) with a length of ∼ 700 nm have been successfully grown by one-step electrochemical technique into Anodic Alumina Membranes. Ciclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd2+ ions and SeO2. The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while Micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼ 0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with direct band gap of 1.75 eV and n-type semiconducting behaviour.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
