Epitaxial layers of CdTe grown on GaAs by H2 transport VPE have been investigated. Excess carrier lifetime depth profiles have been examined by transient microwave absorption technique. The recombination and trapping lifetime depth profiles are compared with depth distribution of the elements composing the structure determined by Ar+ SIMS. Correlation of the profiles of recombination parameters with depth scans of the composition elements and C, O impurities within structure is discussed.
Recombination and structural characteristics of CdTe/GaAs layered structures
LOVERGINE, Nicola
2003-01-01
Abstract
Epitaxial layers of CdTe grown on GaAs by H2 transport VPE have been investigated. Excess carrier lifetime depth profiles have been examined by transient microwave absorption technique. The recombination and trapping lifetime depth profiles are compared with depth distribution of the elements composing the structure determined by Ar+ SIMS. Correlation of the profiles of recombination parameters with depth scans of the composition elements and C, O impurities within structure is discussed.File in questo prodotto:
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