HgTe-ZnTe strained layer superlattices have been grown by MOVPE on {111}B CdTe, {111}B GaAs and {100}GaAs substrates. It was found that the presence of the Zn precursor, dimethyl zinc (DMZn), seriously affected the growth of HgTe and it was necessary to ensure complete flushing of the reactor between ZnTe and HgTe phases of the growth cycle. The superlattices were characterised by a combination of SEM, EDX, RHEED, XTEM and infra-red transmission spectroscopy.
Growth of HgTe-ZnTe strained layer superlattices by MOVPE
LOVERGINE, Nicola;
1990-01-01
Abstract
HgTe-ZnTe strained layer superlattices have been grown by MOVPE on {111}B CdTe, {111}B GaAs and {100}GaAs substrates. It was found that the presence of the Zn precursor, dimethyl zinc (DMZn), seriously affected the growth of HgTe and it was necessary to ensure complete flushing of the reactor between ZnTe and HgTe phases of the growth cycle. The superlattices were characterised by a combination of SEM, EDX, RHEED, XTEM and infra-red transmission spectroscopy.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
