We have fabricated ZnSe/ZnS quantum wires by MOCVD and electron-beam lithography with wire width ranging between 27 and 100 nm. High emission efficiency around 3 eV is demonstrated. The concomitant occurrence of lateral quantization and inhomogeneous strain is discussed.
ZnSe/ZnS single quantum wire heterostructures emitting in the near-ultraviolet region
RINALDI, Rosaria;LOVERGINE, Nicola;CINGOLANI, Roberto;VASANELLI, Lorenzo;
1998-01-01
Abstract
We have fabricated ZnSe/ZnS quantum wires by MOCVD and electron-beam lithography with wire width ranging between 27 and 100 nm. High emission efficiency around 3 eV is demonstrated. The concomitant occurrence of lateral quantization and inhomogeneous strain is discussed.File in questo prodotto:
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