This paper describes application of picosecond non-degenerate four-wave mixing spectroscopy for the characterization of the surface region in layered semiconductor heterostructures. To demonstrate the influence of decreasing dimensionality of a structure on the experimental results, three model systems with progressively decreasing average layer thickness l(z): bulk GaAs (l(z) --> infinity), CdTe/ZnTe heterostructure (l(z) approximate to 1 um), and GaAs/InGaAs MQW structure (l(z) approximately 10 nm) were characterized by non-degenerate four-wave mixing. Analysis of the obtained data demonstrates important aspects related to application of this technique for the characterization of thin films and low-dimensional structures.

Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures

LOVERGINE, Nicola;
2000-01-01

Abstract

This paper describes application of picosecond non-degenerate four-wave mixing spectroscopy for the characterization of the surface region in layered semiconductor heterostructures. To demonstrate the influence of decreasing dimensionality of a structure on the experimental results, three model systems with progressively decreasing average layer thickness l(z): bulk GaAs (l(z) --> infinity), CdTe/ZnTe heterostructure (l(z) approximate to 1 um), and GaAs/InGaAs MQW structure (l(z) approximately 10 nm) were characterized by non-degenerate four-wave mixing. Analysis of the obtained data demonstrates important aspects related to application of this technique for the characterization of thin films and low-dimensional structures.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/367627
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