Electronic and optical properties of bulk crystals and epistructures have been studied via light interaction with inherent growth defects, deep impurities and defect complexes. Excitation by light interference pattern allowed us to monitor spatially-modulated carrier generation, recombination and transport in subnanosecond time domain, determine photogenerated carrier density, lifetime, diffusion coefficient and study defect-related features in an all-optical way.

Characterisation of bulk crystals and structures by light-induced transient grating technique

LOVERGINE, Nicola
2002-01-01

Abstract

Electronic and optical properties of bulk crystals and epistructures have been studied via light interaction with inherent growth defects, deep impurities and defect complexes. Excitation by light interference pattern allowed us to monitor spatially-modulated carrier generation, recombination and transport in subnanosecond time domain, determine photogenerated carrier density, lifetime, diffusion coefficient and study defect-related features in an all-optical way.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/367413
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