A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors polyacenes operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.
Trapping-Detrapping Fluctuations in Organic Space-Charge Layers
PENNETTA, Cecilia;REGGIANI, Lino
2009-01-01
Abstract
A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors polyacenes operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage characteristics, is related to the relative current noise spectral density at the trap-filling transition. The agreement between theory and experiments validates the model and provides an estimate of the concentration and energy level of deep traps.File in questo prodotto:
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