The leakage-current in planar nanojunctions, usually employed to realize molecular field-effect devices, is investigated. Resonances are observed on p-doped substrates when the voltage drop between drain and gate electrodes is around 1.1 V. These resonances are related to resonant tunneling via impurity atoms and are otherwise not observed on n-type substrates.
Resonant tunnelling leakage in planar metal-oxide-metal nanojunctions
MARUCCIO, Giuseppe;VISCONTI, Paolo;CINGOLANI, Roberto;RINALDI, Rosaria
2003-01-01
Abstract
The leakage-current in planar nanojunctions, usually employed to realize molecular field-effect devices, is investigated. Resonances are observed on p-doped substrates when the voltage drop between drain and gate electrodes is around 1.1 V. These resonances are related to resonant tunneling via impurity atoms and are otherwise not observed on n-type substrates.File in questo prodotto:
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