Extremely low voltage white organic light-emitting devices WOLEDs with fluorescent emitters are realized exploiting p-i-n structure. White light is obtained by two complementary colors system, in which the yellow and the blue emitting components are based on 5,6,11, 12-tetraphenylnaphthacene rubrene and 4,4-bis-2, 2-diphenylvinyl-1, 1-spirobiphenyl Spiro-DPVBi, respectively. The effects on the device performances of various electron blocking layers and hosts for rubrene are discussed. The best device shows a luminance of 1000 cd/m2 at bias of as low as 2.9 V, and 10 000 cd/m2 at 4.7 V with a maximum power efficiency of 8.7 lm/W. The Commission Internationale de 1’Eclairage chromaticity coordinates change from 0.36, 0.45 at 1000 cd/m2 to 0.33, 0.42 at 10 000 cd/m2 showing high color stability.

Extremely low voltage and high bright p-i-n fluorescent white organic light-emitting diodes

MAZZEO, MARCO;MARIANO, Fabrizio;CINGOLANI, Roberto;GIGLI, Giuseppe
2008-01-01

Abstract

Extremely low voltage white organic light-emitting devices WOLEDs with fluorescent emitters are realized exploiting p-i-n structure. White light is obtained by two complementary colors system, in which the yellow and the blue emitting components are based on 5,6,11, 12-tetraphenylnaphthacene rubrene and 4,4-bis-2, 2-diphenylvinyl-1, 1-spirobiphenyl Spiro-DPVBi, respectively. The effects on the device performances of various electron blocking layers and hosts for rubrene are discussed. The best device shows a luminance of 1000 cd/m2 at bias of as low as 2.9 V, and 10 000 cd/m2 at 4.7 V with a maximum power efficiency of 8.7 lm/W. The Commission Internationale de 1’Eclairage chromaticity coordinates change from 0.36, 0.45 at 1000 cd/m2 to 0.33, 0.42 at 10 000 cd/m2 showing high color stability.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/327781
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