A method was proposed to obtain room temperature ground state emission from InGaAs quantum dots (QD) growth directly into a binary GaAs matrix. The wavelength was tuned from 1.26 up to 1.33 μ by varying the V/III ratio during growth of the GaAs cap layer, without using a seeding layer of InGaAs wells. The morphology and density of the dots were studied by atomic force microscopy. Significant redshifting of the emission wavelength and narrowing of the full width half maximum (FWHM) are obtained by reducing the V/III ratio for growth of the GaAs cap layer.

Long wavelength emission in In[sub x]Ga[sub 1 - x]As quantum dot structures grown in a GaAs barrier by metalorganic chemical vapor deposition

DE VITTORIO, Massimo;CINGOLANI, Roberto
2004-01-01

Abstract

A method was proposed to obtain room temperature ground state emission from InGaAs quantum dots (QD) growth directly into a binary GaAs matrix. The wavelength was tuned from 1.26 up to 1.33 μ by varying the V/III ratio during growth of the GaAs cap layer, without using a seeding layer of InGaAs wells. The morphology and density of the dots were studied by atomic force microscopy. Significant redshifting of the emission wavelength and narrowing of the full width half maximum (FWHM) are obtained by reducing the V/III ratio for growth of the GaAs cap layer.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/300829
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