Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum dot laser structure was discussed. There structures are grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Results showed that ground state is present only in MBE samples.
Comparison of radiative and structural properties of 1.3 mu m In/sub x/Ga/sub (1-x)/As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: effect on the lasing properties
DE VITTORIO, Massimo;CINGOLANI, Roberto;
2003-01-01
Abstract
Comparison of radiative and structural properties of 1.3 μm InxGa(1-x)As quantum dot laser structure was discussed. There structures are grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Results showed that ground state is present only in MBE samples.File in questo prodotto:
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