An InGaAs/GaAs quantum-dot (QD) microcavity light-emitting diode (MCLED) emitting at 1.3 μm at room temperature was analyzed. The long wavelength emission of 1.3 μm emission was achieved by using InGaAs quantum dots which were directly grown on GaAs by metallorganic chemical vapor deposition. Electroluminescence bright emission peaked at 1298 nm was exhibited by the device with full width at half maximum of 6.5 meV. The results show linear dependence of optical output power as function of injection current.
Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 mu m and grown by metalorganic chemical vapor deposition
DE VITTORIO, Massimo;CINGOLANI, Roberto;
2004-01-01
Abstract
An InGaAs/GaAs quantum-dot (QD) microcavity light-emitting diode (MCLED) emitting at 1.3 μm at room temperature was analyzed. The long wavelength emission of 1.3 μm emission was achieved by using InGaAs quantum dots which were directly grown on GaAs by metallorganic chemical vapor deposition. Electroluminescence bright emission peaked at 1298 nm was exhibited by the device with full width at half maximum of 6.5 meV. The results show linear dependence of optical output power as function of injection current.File in questo prodotto:
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