We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm).
Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low−pressure CH4 and C2H2 atmospheres
D'ANNA, Emilia;LEGGIERI, Gilberto;LUCHES, Armando;
2004-01-01
Abstract
We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm).File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
