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EnglishWe report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm).
| Titolo: | Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low−pressure CH4 and C2H2 atmospheres |
| Autori: | |
| Data di pubblicazione: | 2004 |
| Rivista: | |
| Abstract: | We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm). |
| Handle: | http://hdl.handle.net/11587/111428 |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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