We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm).

Titanium carbide film deposition on silicon wafers by pulsed KrF laser ablation of titanium in low−pressure CH4 and C2H2 atmospheres

D'ANNA, Emilia;LEGGIERI, Gilberto;LUCHES, Armando;
2004

Abstract

We report on the deposition of thin titanium carbide films on 60 mm and 100 mm Si wafers by KrF laser ablation of titanium targets in low-pressure (0.1 Pa) CH4 and C2H2 atmospheres, and on their characterization. Film characteristics (thickness, composition and crystalline structure) were studied as a function of the carbon-containing gas (C2H2or CH4), laser fluence (4 or 6 J/cm2), substrate temperature (20 or 250◦C) and target-to-substrate distance (70–120 mm).
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/111428
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