The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.

Physical properties of osmium doped tin oxide thin films

VASANELLI, Lorenzo;LICCIULLI, ANTONIO ALESSANDRO
1998

Abstract

The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/109070
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 27
  • ???jsp.display-item.citation.isi??? 24
social impact