The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.

Physical properties of osmium doped tin oxide thin films

VASANELLI, Lorenzo;LICCIULLI, ANTONIO ALESSANDRO
1998-01-01

Abstract

The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11587/109070
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