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EnglishWe have investigated the optical properties of InxGa1xAs/GaAs V-shaped quantum wires (0.1<x< 0.2) by time integrated and magneto-photoluminescence experiments as a function of excitation power density and applied magnetic field at different temperatures. The experimental results indicate the different nature of the radiative recombination processes depending on the In concentration: in the deep quantum wires (x ≥ 0.15) the recombination is excitonic, whereas free carriers seem to dominate in the shallow wires (x = 0.10). We demonstrate that the actual recombination mechanism is primarily effected by the competition between confinement and built-in piezoelectric field which governs the exciton binding energy. Specific theoretical models have been developed to interpret the experimental data.
| Titolo: | Excitonic and Free Carrier Recombination in InxGa1-xAs/GaAs V-shaped Quantum Wire for Different In Content |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Abstract: | We have investigated the optical properties of InxGa1xAs/GaAs V-shaped quantum wires (0.1<x< 0.2) by time integrated and magneto-photoluminescence experiments as a function of excitation power density and applied magnetic field at different temperatures. The experimental results indicate the different nature of the radiative recombination processes depending on the In concentration: in the deep quantum wires (x ≥ 0.15) the recombination is excitonic, whereas free carriers seem to dominate in the shallow wires (x = 0.10). We demonstrate that the actual recombination mechanism is primarily effected by the competition between confinement and built-in piezoelectric field which governs the exciton binding energy. Specific theoretical models have been developed to interpret the experimental data. |
| Handle: | http://hdl.handle.net/11587/109055 |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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