We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found.

Electronic levels and recombination lifetimes for quantum wires in a magnetic field

ANNI, Marco;RINALDI, Rosaria;CINGOLANI, Roberto
2000

Abstract

We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/109054
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