We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found.
Titolo: | Electronic levels and recombination lifetimes for quantum wires in a magnetic field |
Autori: | |
Data di pubblicazione: | 2000 |
Rivista: | |
Abstract: | We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found. |
Handle: | http://hdl.handle.net/11587/109054 |
Appare nelle tipologie: | Articolo pubblicato su Rivista |