Electronic levels and recombination lifetimes for quantum wires in a magnetic field

Lorenzoni, A.; Andreani, L. C.; Lomascolo, M.; Anni, Marco; De Giorgi, M.; Rinaldi, Rosaria; Passaseo, A.; Cingolani, Roberto

doi:10.1002/1521-396X(200003)178:1<239::AID-PSSA239>3.0.CO;2-I

We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found.

Titolo:	Electronic levels and recombination lifetimes for quantum wires in a magnetic field
Autori:	A. LORENZONI L. C. ANDREANI M. LOMASCOLO ANNI, Marco M. DE GIORGI RINALDI, Rosaria A. PASSASEO CINGOLANI, Roberto mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2000
Rivista:	PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH
Abstract:	We present a systematic study of electronic levels and recombination lifetimes for rectangular and V-shaped quantum wires (QWRs) in a magnetic field B. In both cases, the effect of B is a modification of the subband dispersion consisting mainly in a flattening at small values of the wave vector: this feature is explained with the appearance of Landau levels inside the wire profile, and it becomes more pronounced with growing magnetic field. As a consequence, an increase in the calculated free-carrier lifetime with the field strength is found. This behaviour is experimentally observed in InxGa1—xAs/GaAs V-shaped quantum wires with an In content x = 0.10, where the exciton is ionised and the recombination mechanism is supposed to be a free-carrier one; a quantitative agreement between theory and experiment is found.
Handle:	http://hdl.handle.net/11587/109054
Appare nelle tipologie:	Articolo pubblicato su Rivista

File in questo prodotto:

Non ci sono file associati a questo prodotto.

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11587/109054

Citazioni

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

CINECA IRIS Institutional Research Information System

File in questo prodotto: