We report on random lasing in a neat film of substituted quinquethienyl S,S-dioxide. Despite the absence of intentionally introduced scatterers random lasing with 5 Å Full Width at Half Maximum is observed. The angular distribution of random lasing modes is studied through angle resolved emission measurements demonstrating that random lasing emission is directional with a 8° divergence but different individual emission direction. The origin of the feedback is investigated through Atomic Force Microscopy demonstrating that random lasing is observed only when 50 nm diameter holes are present in the film.

Emission Properties of organic random laser

ANNI, Marco;GIGLI, Giuseppe;CINGOLANI, Roberto
2004

Abstract

We report on random lasing in a neat film of substituted quinquethienyl S,S-dioxide. Despite the absence of intentionally introduced scatterers random lasing with 5 Å Full Width at Half Maximum is observed. The angular distribution of random lasing modes is studied through angle resolved emission measurements demonstrating that random lasing emission is directional with a 8° divergence but different individual emission direction. The origin of the feedback is investigated through Atomic Force Microscopy demonstrating that random lasing is observed only when 50 nm diameter holes are present in the film.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/108957
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