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EnglishGaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, AUn-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 +/- 0.06 and 0.98 +/- 0.06 eV, respectively, for the two types of epitaxial junctions. (c) 2005 WILEY-VCH Verlag GmbH & Co.
| Titolo: | Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1x1 surfaces |
| Autori: | |
| Data di pubblicazione: | 2005 |
| Rivista: | |
| Abstract: | GaN(0001) epilayers were fabricated by rf-plasma enhanced molecular beam epitaxy on GaN templates. The templates were grown by metalorganic chemical vapor deposition on sapphire. The layers exhibited the 2 x 2 reconstruction of the Ga-face during growth and the 1 x 1 reconstruction upon cooling. On such surfaces, AUn-GaN and Au/n-GaN junctions were fabricated in-situ by molecular beam epitaxy. X-ray photoemission spectroscopy studies allowed us to determine n-type Schottky barrier heights of 0.61 +/- 0.06 and 0.98 +/- 0.06 eV, respectively, for the two types of epitaxial junctions. (c) 2005 WILEY-VCH Verlag GmbH & Co. |
| Handle: | http://hdl.handle.net/11587/107811 |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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