We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 °C), a high emission efficiency beyond 1.3 μm and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 °C, with respect to those grown at 550 °C, thus providing electroluminescence emission near 1.3 μm.

Improved performances of 1.3 mu m InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition

DE VITTORIO, Massimo;CINGOLANI, Roberto;
2005

Abstract

We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 °C), a high emission efficiency beyond 1.3 μm and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 °C, with respect to those grown at 550 °C, thus providing electroluminescence emission near 1.3 μm.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/107805
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