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EnglishDegradation of thin films is studied within a stochastic approach based on a percolative technique. The thin film is modeled as a two-dimensional (2-D) random resistor network in thermal contact with a substrate. Its microscopic degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed. The degradation and failure of metallic interconnects and dielectric insulators are then described as a conductor-insulator (CI) and an insulator-conductor (IC) transition, respectively. The recovery of the damage competing with the degradation can also lead to a steady-state condition. The main features of experiments are reproduced together with their statistical properties. Our approach thus provides a unified description of degradation and failure processes in terms of physical parameters.
| Titolo: | A Percolative Approach to Reliability of Thin Films |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Abstract: | Degradation of thin films is studied within a stochastic approach based on a percolative technique. The thin film is modeled as a two-dimensional (2-D) random resistor network in thermal contact with a substrate. Its microscopic degradation is characterized by a breaking probability of the single resistor. A recovery of the damage is also allowed. The degradation and failure of metallic interconnects and dielectric insulators are then described as a conductor-insulator (CI) and an insulator-conductor (IC) transition, respectively. The recovery of the damage competing with the degradation can also lead to a steady-state condition. The main features of experiments are reproduced together with their statistical properties. Our approach thus provides a unified description of degradation and failure processes in terms of physical parameters. |
| Handle: | http://hdl.handle.net/11587/107695 |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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