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EnglishA semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.
| Titolo: | High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers | |
| Autori: | ||
| Data di pubblicazione: | 2006 | |
| Rivista: | ||
| Abstract: | A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 μm were fabricated and tested. A high modal gain of 41 cm-1was obtained at room temperature corresponding to a modal gain of ∼6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-μm ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-μm-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively. | |
| Handle: | http://hdl.handle.net/11587/107301 | |
| Appare nelle tipologie: | Articolo pubblicato su Rivista |
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