In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.

High-performance directly modulated 1.3-μm undoped InAs-InGaAs quantum-dot lasers

CINGOLANI, Roberto;DE VITTORIO, Massimo;
2007

Abstract

In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μm InAs-InGaAs quantum-dot (QD) lasers in a wide temperature range. A 3.125-Gb/s data modulation over temperature with an extinction ratio up to 10 dB is reported. Moreover, 10-Gb/s eye patterns at 15 °C and 50 °C and 5-Gb/s modulation in the whole explored temperature range (15 °C-85 °C) are demonstrated. These results were obtained by exploiting heterostructures containing six layers of high modal gain InAs QDs grown without incorporation of p-doping in the active region or tunnelling injection structure implementation. QD lasers exhibited a saturation modal gain as high as 36.3 cm-1, ground state lasing from short cavities down to 400-μm length and a characteristic temperature of about 110 K in a large temperature range between 15 °C and 85 °C.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/107234
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