High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm-1 and 35 A cm-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.

High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm

FORTUNATO, LAURA;MARTIRADONNA, LUIGI;CINGOLANI, Roberto;DE VITTORIO, Massimo
2007

Abstract

High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm-1 and 35 A cm-2, respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/107233
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