We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.
Titolo: | Light Emission Tuning of InGaAs/InGaAs Quantum Dots through a Two-Dimensional Photonic Crystal |
Autori: | |
Data di pubblicazione: | 2003 |
Rivista: | |
Abstract: | We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states. |
Handle: | http://hdl.handle.net/11587/107228 |
Appare nelle tipologie: | Articolo pubblicato su Rivista |
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