The high temperature characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7×106A/W at room temperature and of 1.4×106A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations.

High responsivity GaN-based UV detectors

DE VITTORIO, Massimo
2003

Abstract

The high temperature characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7×106A/W at room temperature and of 1.4×106A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11587/107224
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