The high temperature characterisation of low barrier metal-semiconductor-metal (MSM) GaN-bulk photodetectors is reported. A very high DC responsivity of 6.7×106A/W at room temperature and of 1.4×106A/W at 450 K was achieved at the wavelength of 325 nm. These values, which are to our knowledge the highest reported in the literature, are in good agreement with our theoretical calculations.
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